Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures
Identifieur interne : 011D54 ( Main/Repository ); précédent : 011D53; suivant : 011D55Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures
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Abstract
We report on the luminescence properties of AlInGaN/In0.08Ga0.92N quantum wells (QWs) subjected to a variable amount of lattice mismatch induced strain, including wells with zero strain, compressive strain, and tensile strain. The primary peak emission energy of a 3 nm In0.08Ga0.92N QW was redshifted by 236 meV as the stress in the well was changed from -0.86% (compressive) to 0.25% (tensile). It was also found that the photoluminescence intensity of quantum wells decreased with increasing strain. A lattice matched 9 nm QW exhibited a luminescence intensity that is three times greater than its highly strained counterpart. The potential applications of this strain engineering will be discussed. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures</title><author><name sortKey="Aumer, M E" uniqKey="Aumer M">M. E. Aumer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh</wicri:cityArea></affiliation></author><author><name sortKey="Leboeuf, S F" uniqKey="Leboeuf S">S. F. Leboeuf</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh</wicri:cityArea></affiliation></author><author><name sortKey="Bedair, S M" uniqKey="Bedair S">S. M. Bedair</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh</wicri:cityArea></affiliation></author><author><name sortKey="Smith, M" uniqKey="Smith M">M. Smith</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0336887</idno><date when="2000-08-07">2000-08-07</date><idno type="stanalyst">PASCAL 00-0336887 AIP</idno><idno type="RBID">Pascal:00-0336887</idno><idno type="wicri:Area/Main/Corpus">012A92</idno><idno type="wicri:Area/Main/Repository">011D54</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Internal stresses</term><term>Line intensity</term><term>Photoluminescence</term><term>Piezo-optical effects</term><term>Semiconductor quantum wells</term><term>Spectral shift</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7855C</term><term>6865</term><term>7820H</term><term>Etude expérimentale</term><term>Aluminium composé</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Contrainte interne</term><term>Effet piézooptique</term><term>Photoluminescence</term><term>Déplacement spectral</term><term>Intensité raie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the luminescence properties of AlInGaN/In<sub>0.08</sub>Ga<sub>0.92</sub>N quantum wells (QWs) subjected to a variable amount of lattice mismatch induced strain, including wells with zero strain, compressive strain, and tensile strain. The primary peak emission energy of a 3 nm In<sub>0.08</sub>Ga<sub>0.92</sub>N QW was redshifted by 236 meV as the stress in the well was changed from -0.86% (compressive) to 0.25% (tensile). It was also found that the photoluminescence intensity of quantum wells decreased with increasing strain. A lattice matched 9 nm QW exhibited a luminescence intensity that is three times greater than its highly strained counterpart. The potential applications of this strain engineering will be discussed. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>77</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures</s1></fA08><fA11 i1="01" i2="1"><s1>AUMER (M. E.)</s1></fA11><fA11 i1="02" i2="1"><s1>LEBOEUF (S. F.)</s1></fA11><fA11 i1="03" i2="1"><s1>BEDAIR (S. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>SMITH (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="06" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>821-823</s1></fA20><fA21><s1>2000-08-07</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0336887</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the luminescence properties of AlInGaN/In<sub>0.08</sub>Ga<sub>0.92</sub>N quantum wells (QWs) subjected to a variable amount of lattice mismatch induced strain, including wells with zero strain, compressive strain, and tensile strain. The primary peak emission energy of a 3 nm In<sub>0.08</sub>Ga<sub>0.92</sub>N QW was redshifted by 236 meV as the stress in the well was changed from -0.86% (compressive) to 0.25% (tensile). It was also found that the photoluminescence intensity of quantum wells decreased with increasing strain. A lattice matched 9 nm QW exhibited a luminescence intensity that is three times greater than its highly strained counterpart. The potential applications of this strain engineering will be discussed. © 2000 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H20H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6865</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7820H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Contrainte interne</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Internal stresses</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Effet piézooptique</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Piezo-optical effects</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Déplacement spectral</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Spectral shift</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Intensité raie</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Line intensity</s0></fC03><fN21><s1>228</s1></fN21><fN47 i1="01" i2="1"><s0>0032M000129</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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